الفهرس 
الملخص العربى
Theoretical work on free oarrier soattering on sel.:iconductor surfacesOnly 14 pages are availabe for public view
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Abstract
In resent many efforts have been devoted to the investigation of the physical and. the electronic properties of semiconductor dieleotric.1nterfaoe systems. One of the most important structures which has been extensively studied during the last decade is the metal silicon dioxide - silicon t or generally t the MOS structure • This is because of the growing interest in microelectronics integrated circuits, and generally, surface passivation technology On the other hand physicists have found in such a MOS structure a powerful tool for the development of surface and interface research. The ability of thermally grown SiO2 dielectric layers on Si surface to sustain sufficiently high electric field has allowed many workers to extend the surface transport studies over the limit of surface electric quantization. Research of this type is very important for the establishment of a microscopic theory of surface scattering, and for supplying informations about the nature of interface states and traps t their electronic structure and origin. The presence of these interface states and traps remains, however, the formidable obstacle blocking further development of surface microelectronics and interface devices such as solar batteries and electric memory systems.