الفهرس | Only 14 pages are availabe for public view |
Abstract The increasing demand for the highly efficient communication and computations imposes severe constrains on the metal-oxide- semiconductor field-effect-transistor (MOSFET), which is the essence of the modem-electronics. ’1he extreme downscaling of the traditional MOSFET to achieve higher density, faster speed, and lower cost; faces several challenges that degrade device performance. To overcome the performance-degradation problems and extend semiconductor technology revolution, alternative non-classical devices such as gate-all- around (GAA) transistors have been recommended. GAA devices are believed one of the hopeful structures that can miniaturize complementary MOS (CMOS) technology deeper into nanometer scale. GAA devices have excellent control over channel by the gate, better short-channel performance, high on-state current capability, and very low leakage-current than other multi-gate devices. Moreover, new materials such as III- V semiconductors, high permittivity dielectrics, and metal gates have been suggested besides the standard materials to improve device performance. The thesis concentrates on the behavioral modeling and characterization of GAA devices, aiming to extract their physical characteristics and provide a tool for simulating GAA transistors- based circuits. The thesis begins by the analytical solution of the three- dimensional (3D) Poisson’s equation with mobile-carriers to accurately figure out the potential distribution at any point in the lightly-doped (LD) long-channel (LC) square (S) GAA MOSFETs. Based on the developed |