الفهرس | Only 14 pages are availabe for public view |
Abstract Indium Phosphide (InP) quantum dots are synthesized by the hot injection preparation technique. They are characterized by using; XRD, HRTEM, FTIR, UV-Vis, PL, Time resolved spectroscopy and EQE. Zincblende crystal structure is recognized from XRD and confirmed by SAED. These quantum dots have particle size varying from 4 to 6 nm so the band gap has changed due to the change in the particle size. The band gap of the quantum dots can be measured by UV-Vis and PL. This band gap made these quantum dots compatible for solar cells. These quantum dots showed an external quantum efficiency of 3.34% which indicated high sensitivity of the produced InP to the incident photons. Solar cell devices are built up by using InP QDs onto TiO2 films and measure the photovoltaic performance. These cells showed good performance and efficiency. |